This study investigates the fabrication of silicon nanowires (SiNWs) through the n-type silicon using the metal-assisted chem. etching (MACE) technique for photodetection applications.The synthesized SiNWs underwent comprehensive material characterization using field emission SEM (FESEM), X-ray diffraction (XRD), at. force microscopy (AFM), and Fourier-transform IR spectroscopy (FTIR).These analyses confirmed the uniformity and purity of the nanowires.Elec. measurements, specifically I-V characteristics, were conducted to evaluate the conductivity, carrier mobility, and electronic properties of the SiNWs.A metal-semiconductor-metal (MSM) device has been fabricated incorporating these SiNWs and shows the high c.d. with 1-5 μA current at ±5 V.Moreover, the device shows a good photoresponse with enhanced photocurrent 7.5 and 6.1 μA at +5 and -5 V, resp., under 650 W/m2 optical illumination.Furthermore, the MSM device demonstrates a very prompt risetime (TRise) of 1.25 s and a falltime (TFall) of 2.7 s under 650 W/m2 illuminations.The results underscore the potential of MACE-grown SiNWs in developing high-performance photodetectors, emphasizing their suitability for integration into advanced optoelectronic devices.These findings highlight the promising capabilities of SiNWs in photodetection, paving the way for their application in next-generation optoelectronic technologies.
