In this study, the design, synthesis, and spectroscopic characterization of a fluorene-based electron-rich D-π-D type organic semiconductor material 4,4′-((9H-fluoren-9-ylidene)methylene)bis(N,N-diphenylaniline), namely TPA2, were achieved by selecting triphenylamine (TPA) as the donor group.The Au/TPA2/p-Si/Al photodiode fabricated using TPA2 organic material as interface material.The elec. and optical properties of photodiode were investigated.The SEM and AFM images of the TPA2/p-Si thin film were analyzed.Also, UV-Vis absorption spectra measurement of the thin film was analyzed.The current-voltage (I-V) measurements of the diode were performed for different light intensity values.Elec. paremeters [ideality factor (n) and barrier height (Φb), rectification rates (RR), saturation current (I0)] and photodiode parameters [photocurrent (Iph), photosensitivity (S), photoresponse (R), detectivity (D*)] of the diode were calculated using the I-V measurements of the diode.With increasing light intensity between 0 mW/cm2 and 100 mW/cm2 light intensity, the n values varies between 1.41 and 2.14, the Φb values varies between 0.81 and 0.66, the Rs values varies between 171 Ω and 1487 Ω and the RR values varies between 196.2 and 42.4.The calculated fundamental elec. and photodiode parameters showed that TPA2 material improved the elec. and optical parameters.The analyzed exptl. results show that the Au/TPA2/p-Si/Al diode exhibits a good photodiode behavior under various light intensities and this diode can be used in optoelectronic devices.