Piezoelec. semiconductor (PSC) devices, which have both piezoelec. and semiconducting properties, have recently received particular attention in engineering practice.However, the insufficiencies of researches in wave motion and the influence of biasing elec. field limit the designs of smart PSC devices.In this paper, three-dimensional dynamic governing equations of PSC with initial biasing elec. fields are first derived under linear assumptions, and then, based on the Hamilton variational principle, the wave motion equations of PSC beam under biasing elec. field are deduced to anal. obtain the complex dispersion equations of flexural waves.From the complex dispersion relations of flexural waves, the influences of initial electron concentration and biasing elec. field on flexural waves in PSC beam are discussed.Comparing with the numerical results of flexural wave propagation in time-domain, the validation of derived theor. model is proved to show a good consistence.Results indicate that for the case of no external biasing elec. field, the propagating flexural wave will attenuate due to the damping effect of electron.However, when the biasing elec. field is applied, the flexural wave will exhibit gain effect during propagation.Therefore, the derived model can be a good theor. guidance for designing PSC devices including sensors, transistor, resonators as well as other wave motion devices.